Effect Of Rapid Thermal Annealing On Oxygen Precipitation Behavior In Silicon Wafers
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Electrochemical and Solid-State Letters 15 The
to the simple thermal effect of UV light; instead it is ascribed to electron excitation in the ﬁlm induced by the UV photo-annealing. The π → π* transition of UV absorbing species in the ﬁlm gives rise to the dissociation of organic groups and the promotion of M-O-M bonds.21 In addition, ozone and active oxygen species produced
nitrogen ambient, followed by rapid cooling to room Samples from the Set I were annealed with silicon nitride passivation in place, whereas Set II samples were thoroughly cleaned prior to thermal annealing. The characterization process described above was performed after every annealing step. III. RESULTS
DEFECTS IN SILICON II - GBV
supersaturation during oxygen precipitation in silicon,w.j. taylor, t. y. tan, and u.m. gssele 255 onthemorphology andthe critical sizeof precipitates in crystals with cubic symmetry and application to precipitationinsilicon,janvanhellemont and cor claeys 263 * oxygen, carbon, nitrogen, and hydrogen in silicon, r. c. newman 271
Separate experiments of CZ-Si (containing oxygen) have shown that oxygen is extremely mobile in back surface damaged regions and ion implanted junctions of Si wafers. Motion and gettering of 160 into processing regions has been demonstrated at annealing temperatures as low as 3500C. Evaluations of CdTe, HgCdTe and LPE-HigCdTe/CdTe samples currently
SEMICONDUCTOR SILICON 1986
review: assisted oxidation and annealing in vlsi and ulsi a. reisman 364 rapid thermal oxidation and nitridation of silicon m. m. moslehi, s. c. shatas and k. c, saraswat 379 application of uv radiation in pre-oxidation treatments of silicon wafers j. ruzyllo, a. m. hoff and g. duranko 398 a physical model for si oxidation kinetics in the thickness
SEMICONDUCTOR - ASTM International
Interaction Between Point Defects and Oxygen in Silicon JOSEPH R. MONKOWSKI, DANIEL HECK, THOMAS A. BAGINKSI, DAVID KENNEY, AND RICHARD E. TRESSLER 219 Effects of Oxygen on Process-Induced Defects and Gettering in Cz-Silicon ROBERT B. SWAROOP 230 Precipitation Behavior of Deposited Metals in Cz-Silicon
Defects in Electronic Materials - Assets
effect of rapid thermal processing on oxygen precipitation in silicon 197 g.a. hawkins and j.p. lavine effects of carbon concentration upon oxygen precipitation in cz si 201 s. hahn, m. arst, k.n. ritz, s. shatas, h.j. stein, z.u. rek, and w.a. tiller microscopic analysis of the behavior of interstitial and precipitated oxygen during intrinsic
Impurity Diffusion and Gettering in Silicon
the diffusion of phosphorus in silicon from high surface concentrations h.f. schaake 131 the influence of dislocations on the diffusion behavior of gold in silicon n.a. stolwijk and j. holzl 137 annealing and diffusion of boron in self-implanted silicon by furnace and electron beam heating d.j. godfrey, r.a. mcmahon, d.g. hasko, h. ahmed,
Release of Impurities from Structural Defects in
grown state, after rapid thermal annealing and following an aluminum gettering treatment. The polysilicon is boron doped with a resistivity of 0.8- 1.5 ohm-cm and has an oxygen concentration of l-2xlO atomdcm The wafers were formed by a casting method with subsequent cutting and etching (HNO,+&O,) to remove the damaged surface layer.
Gettering of copper in silicon at half of the projected ion
1015 at/cm2 ﬂuence range, after thermal annealing in the 700 1000°C temperature interval. This phenomenon, called the Rp/2 gettering effect was ﬁrst observed by Tamura, Ando, and Ohya4 by studying the gettering of O in czochral-ski ~CZ! Si after MeV implantation of a variety of ions, such as C, F, Si, Ge, and As.
IMR KINKEN Research Highlights 2011
impurities . Carbon and oxygen are two of the major impurities in multicrystalline silicon. If the carbon concentration exceeds 1x1016 atom/cm3, it will markedly influence the precipitation of oxygen during thermal annealing of crystals and during device processing of the wafers cut from these crystals .
Effect of Oxygen Precipitation in Nitrogen-Doped Annealed
We have studied the effect of oxygen precipitation in annealed silicon wafers on the thermal strain induced during rapid thermal processing (RTP), focusing on the density of oxygen precipitates. It was found that the strain decreased with an increase in the precipitate density.
JHQ Dependency of Precipitation of Interstitial Czochralski
The effect of rapid thermal annealing (RTA) on oxygen precipitation behavior in Czochralski silicon wafers was investigated with an emphasis on the RTA ambient, temperature and cooling rate. It was found that (i) anomalous oxygen precipitation
Effects of oxygen-inserted layers and oxide capping layer on
The effects of oxygen-inserted (OI) layers and a low-temperature-deposited oxide (LTO) capping layer on rapid thermal activation of ultrashallow implanted boron, phosphorus, and arsenic atoms in silicon (Si) are investigated using sheet resistance (R sh) measurements, secondary ion mass
Mechanism for LiNb3O8 phase formation during thermal
and grain boundaries, which induced epitaxial precipitation of the LiNb 3 O 8 phase on the LN (0001) plane. While the LiNb 3 O 8 volume exhibited saturation behavior against annealing time, oxygen atoms continued to diffuse out from the inner part of the film. Arrhenius plots of the rate of LiNb 3 O 8 formation and oxygen loss were scaled with
Table of Contents - Scientific.Net
Dislocation Motions in Czochralski Silicon Wafers Treated by Rapid Thermal Processing under Different Atmospheres L.M. Xu, C. Gao, X.Y. Ma and D.R. Yang 238 VI. Metals in Silicon: Fundamental Properties and Gettering New Results on the Electrical Activity of 3d-Transition Metal Impurities in Silicon J. Weber, L. Scheffler, V. Kolkovski and N
CdS-nanoparticle light-emitting diode on Si
presents in samples prepared in oxygen-rich environment. Coa1ecence of nanoparticles into bulk form also occurs to cp*ribi4 to increased magnitude of1uminescence Spectral behaviors of electroluminescence with varied temperature are studied. Keywords: Nanoparticle, low-dimensional structures, CdS light emitting diode, temperature effect,
Impact of Transition2Metal Contamination on Oxygen
Abstract : The effects of the transition metals copper and nickel on oxygen precipitation in Czochralski silicon un2 der a rapid thermal process are investigated. It is found that interstitial copper has almost no effect on oxygen pre2 cipitation ,but copper precipitation markedly enhances oxygen precipitation. However , neither interstitial nickel
FORSCHUNGSZENTRUM ROSSENDORF Mitglied der Wissenschaftsgemeinschaft Gottfried Wilhelm Leibniz WISSENSCHAFTLICH-TECHNISCHEBERICHTE FZR-387 Juli 2003
GETTERING OF INTERSTITIAL IRON IN P/P+ EPITAXIAL SILICON WAFERS
the implantation, a 2 min. drive-in was carried out in a rapid thermal processing (RTP) system at I 100°C. The CMOS device manufacturing was simulated using multiple annealing steps with a maximum temperature of 1100°C. Epitaxial wafers without nucleation annealing and those without Fe-implantation were included for comparison.